Microdiode Semiconductor (Shenzhen) Co., Ltd

Products

We offer a comprehensive range of discrete semiconductor devices across six major categories: Diodes, Protection devices, Transistors, MOSFET, SiC, and IC.

MOSFETs

Low-and Medium-Voltage MOSFETs High-Voltage MOSFETs (≥400V)

Protective Devices

Transient Voltage Suppression diode Electrostatic protection diode Thyristor Surge Suppressors

Transistors

General-Purpose Small-Signal Bipolar Transistors Digital Transistors

Diodes

Bridge rectifiers General rectifiers High voltage rectifiers Fast recovery rectifiers High efficiency rectifiers Ultra fast recovery rectifiers Schottky barrier rectifiers Low VF schottky rectifiers Small signal switching diodes Small signal Schottky diodes Zener diodes

SiC

Single SiC Schottky Diodes SiC MOSFETs

Three-Terminal Voltage Regulator ICs Logic ICs

Product Center

MB26S

Status: Active

Package Type:

MBS

Packing Info:

3K/盘, 48K/箱

Category:

Bridge rectifiers

Part Number	Product status	Number of Functions	Max.Reverse Voltage V_RRM (V)	Max.Aver. Fwd.Current l(AV)	Peak Fwd. Surge CurrentT=8.3ms I_FSM(A)	Max.Fwd.Voltage TA=25℃ V_F(V)	Max.Fwd.Voltage TA=25℃ l_F(A)	Maximum Reverse Current TA=25℃ I_R(μA)	Maximum Recovery Time Trr（ns）	Package	Junction Temperature
MB26S	Active	1-Phase Bridge	60	2	50	0.7	2	500	—	MBS	-55 ~ +150

Part Number

Product status

Number of
Functions

Max.Reverse Voltage
V_RRM (V)

Max.Aver. Fwd.Current
l(AV)

Peak Fwd. Surge CurrentT=8.3ms
I_FSM(A)

Max.Fwd.Voltage TA=25℃
V_F(V)

Max.Fwd.Voltage TA=25℃
l_F(A)

Maximum Reverse Current TA=25℃
I_R(μA)

Maximum Recovery Time
Trr（ns）

Package

Junction Temperature

MB26S

Active

1-Phase Bridge

0.7

500

—

MBS

-55 ~ +150

Part Number	Package Type	Packing Specification	Marking Code	Packing Info
MB26S	MBS	MBS		3K/盘, 48K/箱

Part Number

Package Type

Packing Specification

Marking Code

Packing Info

MB26S

MBS

3K/盘, 48K/箱