Microdiode Semiconductor (Shenzhen) Co., Ltd

Products

We offer a comprehensive range of discrete semiconductor devices across six major categories: Diodes, Protection devices, Transistors, MOSFET, SiC, and IC.

MOSFETs

Low-and Medium-Voltage MOSFETs High-Voltage MOSFETs (≥400V)

Protective Devices

Transient Voltage Suppression diode Electrostatic protection diode Thyristor Surge Suppressors

Transistors

General-Purpose Small-Signal Bipolar Transistors Digital Transistors

Diodes

Bridge rectifiers General rectifiers High voltage rectifiers Fast recovery rectifiers High efficiency rectifiers Ultra fast recovery rectifiers Schottky barrier rectifiers Low VF schottky rectifiers Small signal switching diodes Small signal Schottky diodes Zener diodes

SiC

Single SiC Schottky Diodes SiC MOSFETs

Three-Terminal Voltage Regulator ICs Logic ICs

Product Center

MURB2040D

Status: active

Package Type:

TO-263

Packing Info:

0.8K/盘，4K/箱

Category:

Ultra fast recovery rectifiers

Part Number	Product status	Number of Functions	Max.Reverse Voltage V_RRM (V)	Max.Aver. Fwd.Current l(AV)	Peak Fwd. Surge CurrentT=8.3ms I_FSM(A)	Max.Fwd.Voltage TA=25℃ V_F(V)	Max.Fwd.Voltage TA=25℃ l_F(A)	Maximum Reverse Current TA=25℃ I_R(μA)	Maximum Recovery Time Trr（ns）	Package	Junction Temperature
MURB2040D	Active	Dual	400	20	150	1.3	20	10	35	TO-263	175℃

Part Number

Product status

Number of
Functions

Max.Reverse Voltage
V_RRM (V)

Max.Aver. Fwd.Current
l(AV)

Peak Fwd. Surge CurrentT=8.3ms
I_FSM(A)

Max.Fwd.Voltage TA=25℃
V_F(V)

Max.Fwd.Voltage TA=25℃
l_F(A)

Maximum Reverse Current TA=25℃
I_R(μA)

Maximum Recovery Time
Trr（ns）

Package

Junction Temperature

MURB2040D

Active

Dual

400

150

1.3

TO-263

175℃

Part Number	Package Type	Packing Specification	Marking Code	Packing Info
MURB2040D	TO-263	TO-263		0.8K/盘，4K/箱

Part Number

Package Type

Packing Specification

Marking Code

Packing Info

MURB2040D

TO-263

0.8K/盘，4K/箱